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Qorvo QPD1013 GaN RF Transistor

Qorvo QPD1013 GaN RF Transistor is a high-power, wide-bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single-stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.

Features

  • DC to 2.7GHz frequency
  • Low thermal resistance package
  • CW- and pulse-capable

Applications

  • Military radar
  • Land mobile and military radio communications
  • Test instrumentation
  • Wideband and narrowband amplifiers
  • Jammers

Specifications

  • 178W output power
  • 21.8dB linear gain
  • 65V operating voltage
  • 64.8% PAE3dB

Block Diagram

Block Diagram - Qorvo QPD1013 GaN RF Transistor

Evaluation Board

QPD1013 GaN RF Transistor Evaluation Board

Qorvo QPD1013 GaN RF Transistor Evaluation Board

Evaluates the QPD1013 GaN RF transistor.

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Published: 2018-01-24 | Updated: 2023-11-07