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QPD1013SR

Name: Qorvo QPD1013SR
Brand: Qorvo
SKU: 772-QPD1013SR
Price: 224.57 CAD
Availability: OutOfStock

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Mouser #:

772-QPD1013SR

Mfr. #:

QPD1013SR

Mfr.:

Qorvo

Description:

GaN FETs DC-2.7GHz 150W PAE 64.8%

Datasheet:

QPD1013SR Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead-Time:: 20 Weeks Estimated factory production time.

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Minimum: 100 Multiples: 100

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 100)
	$224.57	$22,457.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	DFN-6
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	1.7 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	67 W
Brand:	Qorvo
Configuration:	Single Triple Drain
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD1013EVB01
Gain:	21.8 dB
Maximum Drain Gate Voltage:	65 V
Maximum Operating Frequency:	2.7 GHz
Minimum Operating Frequency:	1.2 GHz
Moisture Sensitive:	Yes
Output Power:	178 W
Packaging:	Reel
Product Type:	GaN FETs
Series:	QPD1013
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	QPD1013
Unit Weight:	7.792 g

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Datasheet

QPD1013SR Datasheet (PDF)

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CAHTS:: 8517620090
CNHTS:: 8541210000
USHTS:: 8541290055
TARIC:: 8517620000
ECCN:: EAR99

QPD1013 GaN RF Transistor

Qorvo QPD1013 GaN RF Transistor is a high-power, wide-bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single-stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.