Silicon Carbide (SiC) Devices

IXYS Silicon Carbide (SiC) Devices are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. IXYS focuses on developing the most reliable Silicon Carbide Semiconductor Devices available.

Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum Operating Temperature Maximum Operating Temperature Packaging
IXYS SiC Schottky Diodes Pwr Diode Disc-Schottky SOT-227B miniblc 90In Stock
Min.: 1
Mult.: 1

Screw Mount SOT-227B-4 Dual 105 A 1.2 kV 1.6 V 1.15 kA 140 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Pwr Diode Disc-Schottky SOT-227B miniblc 5In Stock
Min.: 1
Mult.: 1

Screw Mount SOT-227B-4 Dual 44 A 1.2 kV 1.5 V 1.15 kA 35 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Power Diode Disc-Schottky ISOPLUS247 Non-Stocked
Min.: 30
Mult.: 30

Through Hole ISO247-3 Series 22 A 1.2 kV 1.5 V 750 A 30 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Power Diode Disc-Schottky ISOPLUS247 Non-Stocked
Min.: 30
Mult.: 30

Through Hole ISO247-3 Series 31.7 A 1.2 kV 1.5 V 1 kA 35 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Power Diode Disc-Schottky ISOPLUS247 Non-Stocked
Min.: 30
Mult.: 30

Through Hole ISO247-3 Dual Anode Common Cathode 22 A 1.2 kV 1.5 V 750 A 30 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Power Diode Disc-Schottky ISOPLUS247 Non-Stocked
Min.: 30
Mult.: 30

Through Hole ISO247-3 Dual Anode Common Cathode 31.7 A 1.2 kV 1.5 V 1 kA 35 uA - 40 C + 150 C Tube
IXYS SiC Schottky Diodes Pwr Diode Disc-Schottky SOT-227B miniblc Non-Stocked
Min.: 100
Mult.: 100

Screw Mount SOT-227B-4 Dual 73 A 1.2 kV 1.5 V 1.15 kA 70 uA - 40 C + 150 C Tube