Nexperia NHUMB1 PNP/PNP Double Transistors
Nexperia NHUMB1 PNP/PNP Double Transistors are designed to simplify circuit design and feature high breakdown voltage, built-in resistors, reduced component count, and reduced pick/place costs. These transistors operate at -80V collector-emitter voltage (VCEO), -100mA output current (IO), and -55°C to 150°C ambient temperature range (Tamb). Typical applications include digital applications, cost-saving alternatives for the BC856 series, controlling IC inputs, and switching loads.
Features
- High breakdown voltage
- Built-in resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
- SOT363 SMD package
- AEC-Q101 qualified
Specifications
- -80V collector-emitter voltage (VCEO)
- -100mA output current (IO)
- 235mW total power dissipation (Ptot), per transistor
- -55°C to 150°C ambient temperature range (Tamb)
- -65°C to 150°C storage temperature range (Tstg)
Applications
- Digital applications
- Cost-saving alternative for BC856 series in digital applications
- Controlling IC inputs
- Switching loads
Characteristics Curve
Package Outline
Related Product
Nexperia Resistor Equipped Transistors (RETs)
Space and cost-saving solutions that reduce component count and simplify circuit design.
Published: 2022-01-19
| Updated: 2022-03-11