Texas Instruments UCC5870-Q1 IGBT/SiC MOSFET Gate Driver

Texas Instruments UCC5870-Q1 IGBT/SiC MOSFET Gate Driver is a functional safety compliant, isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, NTC based over-temperature, and DESAT detection, including selectable soft turn off or two-level turn off during these faults. To further reduce the application size, the Texas Instruments UCC5870-Q1 integrates a 4A active Miller clamp during switching and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring up to six analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.

Features

Split output driver provide 15A peak source and 15A peak sink currents
Adjustable "on the fly" gate drive strength
Interlock and shoot-through protection with 150ns(max) propagation delay and programmable minimum pulse rejection
Primary and Secondary side active short circuit (ASC) support
Configurable power transistor protections
- DESAT based short circuit protection
- Shunt resistor based over-current and short circuit protection
- NTC based over-temperature protection
- Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
Integrated diagnostics: Documentation available to aid ISO26262 system design up to ASIL-D
- Built-in self-test (BIST) for protection comparators
- IN+ to transistor gate path integrity
- Power transistor threshold monitoring
- Internal clock monitoring
- Fault alarm (nFLT1) and warning (nFLT2) outputs

Integrated 4A active miller clamp or optional external drive for Miller clamp transistor
Advanced high voltage clamping control
Internal and external supply under-voltage and over-voltage protection
Active output pull-down and default low outputs with low supply or floating inputs
Driver die temperature sensing and over-temperature protection
100kV/µs minimum common-mode transient immunity (CMTI) at V_CM = 1000V
SPI based device reconfiguration, verification, supervision, and diagnosis
Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
Certifications
- 3750V_RMS isolation for 1 minute per UL1577 (planned)