Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs

Taiwan Semiconductor TQMxNB04CR and TQMxNB06CR 40V/60V Automotive MOSFETs are AEC-Q101 qualified, 100% UIS and Rg tested, and feature a junction temperature range of -55°C to +175°C. These Taiwan Semiconductor N-channel, trench-technology MOSFETs offer a low gate charge for fast switching and a low ON resistance to minimize conductive losses. These devices are offered in a RoHS-compliant, Pb-free, and Halogen-free PDFN56U package with wettable flanks.

Features

  • AEC-Q101 qualified
  • 100% UIS and Rg tested
  • Low gate charge for fast switching 
  • Low RDS(ON)
  • +175°C operating junction temperature
  • PDFN56U package with wettable flanks
  • RoHS-compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • 12V automotive systems
  • Solenoid and motor control
  • Automotive transmission control
  • DC-DC converters

Package Outline

Mechanical Drawing - Taiwan Semiconductor TQMxNB04CR & TQMxNB06CR 40V/60V Automotive MOSFETs

Videos

View Results ( 3 ) Page
Part Number Datasheet Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Pd - Power Dissipation
TQM033NB04CR RLG TQM033NB04CR RLG Datasheet 40 V 121 A 3.3 mOhms 87 nC 107 W
TQM150NB04CR RLG TQM150NB04CR RLG Datasheet 40 V 41 A 15 mOhms 20 nC 56 W
TQM050NB06CR RLG TQM050NB06CR RLG Datasheet 60 V 104 A 5 mOhms 114 nC 136 W
Published: 2020-05-21 | Updated: 2024-11-27