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STMicroelectronics STGWA20H65DFB2 HB2 IGBT

STMicroelectronics STGWA20H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA20H65DFB2 HB2 IGBT features a low VCE(sat) of 1.65V (typical) at an IC of 20A. 

The STMicroelectronics STGWA20H65DFB2 HB2 IGBT includes a very fast soft recovery diode co-packaged in antiparallel. This allows the STGWA20H65DFB2 to be specifically designed to maximize efficiency for a wide range of fast applications.

Features

  • +175°C Maximum junction temperature
  • Low VCE(sat) = 1.65V (typical) at IC = 20A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient

Applications

  • Welding
  • Power factor correction
  • Uninterruptible Power Supplies (UPS)
  • Solar inverters
  • Chargers

Schematic

Schematic - STMicroelectronics STGWA20H65DFB2 HB2 IGBT

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Published: 2020-06-24 | Updated: 2025-01-14