STMicroelectronics MDmesh DK5 MOSFETs
STMicroelectronics MDmesh DK5 MOSFETs are very-high voltage fast recovery diodes with a 950V to 1050V breakdown voltage. The DK5 has a very low gate charge, as low as 45nC, and a reverse recovery time (trr) of 250ns (typ.). This makes the MDmesh DK5 ideal for ZVS LLC resonant converters in high-power applications. These applications include industrial welders, plasma generators, high-frequency induction melting/heating, and X-ray machines.
The MDmesh DK5 MOSFET series is also ideal for hard switching topologies thanks to the low on-resistance (RDS(on)) of 0.12Ω (VGS = 10V, ID = 23A ) and excellent ruggedness. The DK5 are available in a wide range of through-hole and SMD power packages including long-lead TO-247 and ISOTOP packages.
Features
- Fast-recovery body diode
- Best RDS(on) x area
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
Applications
- Switching applications
Related MOSFETs
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.