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ROHM Semiconductor RH6 N-Channel Power MOSFETs

ROHM Semiconductor RH6 N-Channel Power MOSFETs offer low on-resistance in a small, high-power, 8-pin, surface mount molded package (HSMT-8). The RH6 MOSFETs feature a 59W power dissipation and a -55°C to +150°C operating temperature range. The RH6 N-Channel Power MOSFETs are designed for switching applications.

Features

  • Low on-resistance
  • Single channel
  • Enhancement mode
  • Si technology
  • High power, small molded package (HSMT-8)
  • Surface mount
  • Lead-free plating
  • Halogen-free and RoHS compliant

Specifications

  • 8-pin
  • 25A to 95A continuous drain current range
  • ±20V gate-source voltage
  • 59W power dissipation
  • 35ns to 51ns typical turn-off delay time range
  • 15ns to 19ns typical turn-on delay time range
  • 8ns to 17ns fall time range
  • 9.5ns to 20ns rise time range
  • 3.6mΩ to 73mΩ on-drain source resistance range
  • 16.7nC to 25nC gate charge range
  • 60V to 150V drain-source breakdown voltage range
  • 2.5V or 4V gate-source threshold voltage range
  • -55°C to +150°C operating temperature range
Published: 2023-02-01 | Updated: 2025-10-10