onsemi NXH300B100H4Q2F2 Q2BOOST Module

onsemi NXH300B100H4Q2F2 Q2BOOST Module offers three channels, higher output power, and easy module mounting. Each channel contains two 1000V, 100A IGBTs, two 1200V, 30A SiC diodes, and two 1600V, 30A bypass diodes. The Q2BOOST Module provides excellent efficiency and thermal losses, with the flexibility to support different manufacturing processes.

The onsemi NXH300B100H4Q2F2 Q2BOOST Module allows a higher output power than other 1200V IGBT solutions. The Q2BOOST Module contains an NTC thermistor.

Features

  • Extremely efficient trench with field stop technology
  • Low switching loss reduces system power dissipation
  • Module design offers high power density
  • Low inductive layout
  • 3-channel in Q2BOOST package
  • Lead-free device

Applications

  • Solar inverters
  • Uninterruptible power supplies

Schematic Diagrams

Schematic - onsemi NXH300B100H4Q2F2 Q2BOOST Module

Pin Connection

Mechanical Drawing - onsemi NXH300B100H4Q2F2 Q2BOOST Module
Published: 2020-09-25 | Updated: 2024-06-24