onsemi FFSH SiC Schottky Diodes
onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
Features
- +175°C maximum junction temperature
- 200mJ avalanche rated
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No reverse recovery/no forward recovery
Applications
- General purpose
- Switch-mode power supplies
- Solar inverters
- Uninterruptible power supplies
- Power switching circuits
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Published: 2016-03-16
| Updated: 2023-04-04