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Nexperia BCXxT 80V 1A Bipolar Junction Transistors

Nexperia BCXxT 80V 1A Bipolar Junction Transistors (BJT) offer high power dissipation capability in a SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. The BJTs offer a collector-emitter voltage VCEO of 45V (BCX51T and BCX54T), 60V (BCX52T and BCX55T), and 80V (BCX53T and BCX56T). These devices feature a high collector current capability IC and ICM. The Nexperia BCX51T, BCX52T, BCX53T, BCX54T, BCX55T, and BCX56T are ideal for various applications, including linear voltage regulators, power management, and high-side switches. The BJTs are AEC-Q101 qualified for automotive applications and are EU/CN RoHS compliant.

Features

  • High collector current capability IC and ICM
  • Three current gain selections
  • Polarity
    • PNP: BCX51T, BCX52T, BCX53T
    • NPN: BCX54T, BCX55T, BCX56T
  • High power dissipation capability
  • -55°C to +150°C ambient operating temperature 
  • SOT89 (SC-62), 3 leads package type 
  • 4.5mm x 2.5mm x 1.5mm; 1.5mm pitch package dimensions 
  • AEC-Q101 qualified
  • RoHS compliant

Application Notes

  • Linear voltage regulators
  • MOSFET drivers
  • High-side switches
  • Power management
  • Amplifiers

Package Outline

Mechanical Drawing - Nexperia BCXxT 80V 1A Bipolar Junction Transistors

Power Bipolar Transistor Datasheets

Published: 2019-09-20 | Updated: 2023-05-03