Microchip Technology High-Speed IGBT4 Power Modules

Microchip Technology High-Speed IGBT4 Power Modules feature low voltage drop, low leakage current, and low switching losses. These modules operate at 1200V collector-emitter voltage (VCES) and provide very low stray inductance, Kelvin emitter/source for an easy drive, and extended temperature range. The benefits of IGBT4 modules are high-efficiency converters, offer outstanding performance at high-frequency operation, low profile, and low junction-to-heatsink thermal resistance. These modules are used in applications like high-reliability power systems, AC switches, high-efficiency AC/DC and DC/AC converters, and motor control.


  • High-speed IGBT4:
    • Low voltage drop
    • Low leakage current
    • Low switching losses
  • SiC Schottky diode:
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Ultra-low weight and profile
  • Si3N4 substrate with thick copper for improved thermal performance
  • Internal thermistor for temperature monitoring
  • Extended temperature range
  • High-efficiency converters
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-heatsink thermal resistance
  • Low profile
  • RoHS compliant
  • Integrated power conversion system


  • High-reliability power systems
  • AC switches
  • High-efficiency AC/DC and DC/AC converters
  • Motor control
Published: 2021-09-30 | Updated: 2022-07-14