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Microchip Technology GMICP2731-10 Ka-Band MMIC Power Amplifier

Microchip Technology GMICP2731-10 Ka-Band MMIC Power Amplifier is fabricated using 0.15μm GaN SiC technology. The amplifier can achieve a 39dBm saturated output power from 27.5-31GHz, with 22% PAE and 22dB small-signal gain. The balanced topology provides excellent broadband input and output match to 50Ω and DC blocking capacitors ensure simple integration. Excellent linearity characteristics make the GMICP2731-10 well suited to applications in Satellite Communications. The die is 100% DC and RF tested on-wafer ensuring compliance to the electrical specifications.

Features

  • 27.5-31GHz frequency range
  • 39.5 dBm (PIN = 24dBm) Pout
  • 22% (PIN = 24dBm) PAE
  • 22dB (28GHz) small signal gain
  • 15dB return loss
  • Drain bias 24V, IDQ=112-224mA
  • 0.15µm GaN on SiC technology
Published: 2021-08-12 | Updated: 2022-03-11