Diotec Semiconductor BC846B-Q SMD General-Purpose NPN Transistor
Diotec Semiconductor BC846B-Q SMD General-Purpose NPN Transistor features three current gain groups in a SOT-23 package and complies with RoHS and REACH. This transistor operates at 65V collector-emitter voltage, 80V collector-base voltage, 6V emitter-base voltage, and 200mA peak collector current. The BC846B-Q NPN transistor utilizes bond wires for commercial grades and AU bond wires for all other grades. The commercial-grade transistor features 200mW commercial-grade power dissipation with <625K/W thermal resistance junction to ambient. The industrial-grade transistor features 250mW commercial-grade power dissipation with <420K/W thermal resistance junction to ambient. The BC846B-Q NPN transistor is housed in a UL 94V-0 case material and available in a small SOT-363 Surface-Mount Device (SMD) package. This NPN transistor is ideal for signal processing, switching, amplification, and commercial and industrial-grade use.
Features
- Commercial-grade uses Cu bond wires
- All other grades: Au bond wires
- General purpose
- Three current gain groups
- Complaint to RoHS, REACH, and conflict materials
- UL 94V-0 case material
- Moisture Sensitivity Level (MSL) 1
- 260°C/10s solder and assembly conditions
Applications
- Signal processing
- Switching
- Amplification
- Commercial and industrial-grade
- AEC-Q101 compliant and qualified
Specifications
- 65V collector emitter voltage
- 80V collector base voltage
- 6V emitter base voltage
- Power dissipation:
- 200mW commercial grade
- 250mW industrial grade
- 100mA collector current
- 200mA peak collector current
- Thermal resistance junction to ambient:
- <625K/W commercial grade
- <420K/W industrial grade
- -55°C to 150°C junction and storage temperature range
Characteristics Curve
Dimesnions
