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Coherent TM3x00 1200V SIC MOSFETs

Coherent TM3x00 1200V SIC MOSFETs feature low RDS(on), superior thermal performance, and industry-leading avalanche capability, ensuring exceptional efficiency and versatility for automotive, industrial, and aerospace systems. The TM3x00 devices are built on Coherent's advanced Gen3+ technology platform and implement fast switching via ultra-low gate resistance. The TM3x00 1200V MOSFETs also provide very low-temperature invariant switching losses in TO247-4L, TSPAK, and TO263-7L package options. These devices are AEC-Q101 qualified at +200°C junction temperature and are proven in AS9100-rated aerospace applications.

Features

  • High voltage and low RDS(ON) up to +200°C
  • Fast switching enabled by ultra-low gate resistance
  • Very low, temperature invariant switching losses
  • Avalanche ruggedness superior to silicon
  • Higher system efficiency, performance, and reliability
  • Fast recovery body diode for synchronous rectification
  • Reduces cooling requirements, overall system cost, and complexity
  • Works in topologies with continuous hard commutation
  • Increases power density
  • Enables bidirectional topologies
  • Suitable for higher temperatures and harsher environments
  • AEC-Q101 qualified
  • Lead-free
  • RoHS and REACH compliant

Applications

  • Automotive
  • Industrial
  • Aerospace

Specifications

  • 1200V drain-source breakdown voltage
  • 12mΩ to 39mΩ drain-source on-resistance range
  • 61A to 171A current rating range
  • 1.9J to 5.3J avalanche energy range
  • -55°C to +200°C operating junction temperature range
  • TO247-4L, TO263-7L, and TSPAK package options

Typical Application Circuit

Application Circuit Diagram - Coherent TM3x00 1200V SIC MOSFETs
Published: 2023-12-01 | Updated: 2025-02-24