Central Semiconductor GaN N-Channel FETs
Central Semiconductor GaN N-Channel FETs excel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.Features
- High voltage capability (650V)
- Low gate charge and rDS(ON) (as low as 3.2mΩ)
- Efficient, fast switching
- Space-saving DFN and CSP
- Also available as bare die
- Minimal power loss in conduction
- High-frequency switching capability
- No reverse recovery losses
Applications
- Wireless charging (high power)
- Defense/aerospace
- Healthcare
- Consumer
- Power Factor Correction (PFC)
- Electric vehicle inverters
View Results ( 7 ) Page
| Part Number | Datasheet | Id - Continuous Drain Current | Qg - Gate Charge | Rds On - Drain-Source Resistance | Pd - Power Dissipation | Vds - Drain-Source Breakdown Voltage | Vgs th - Gate-Source Threshold Voltage | Vgs - Gate-Source Voltage | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Technology | Package / Case | RoHS - Mouser |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CDFG6558N TR13 PBFREE | ![]() |
29 A | 6.2 nC | 80 mOhms | 650 V | 2.5 V | - 6 V, + 7 V | 5 ns | 3 ns | GaN | DFN-8 | Y | |
| CCSPG1510N TR PBFREE | ![]() |
100 A | 20 nC | 3.9 mOhms | 200 mW | 150 V | 2.1 V | - 4 V, + 6 V | GaN | CSP-25 | Y | ||
| CCSPG1560N TR PBFREE | ![]() |
60 A | 13 nC | 7 mOhms | 200 mW | 150 V | - 4 V, + 6 V | GaN | CSP-25 | Y | |||
| CDF56G7032N TR13 PBFREE | ![]() |
18 A | 3.5 nC | 140 mOhms | 113 W | 700 V | 2.5 V | - 6 V, + 7 V | 4 ns | 3 ns | GaN | DFN-8 | Y |
| CCSPG1060N TR PBFREE | ![]() |
60 A | 9.2 nC | 5.5 mOhms | 1.1 W | 100 V | 2.5 V | - 4 V, + 6 V | GaN | CSP-8 | Y | ||
| CDF56G6511N TR13 PBFREE | ![]() |
11.5 A | 2.8 nC | 190 mOhms | 84 W | 650 V | 2.5 V | - 1.4 V, + 7 V | 1.7 ns | 1.4 ns | GaN | DFN-8 | Y |
| CDF56G6517N TR13 PBFREE | ![]() |
17 A | 3.5 nC | 140 mOhms | 113 W | 650 V | 2.5 V | - 1.4 V, + 7 V | 4 ns | 3 ns | GaN | DFN-8 | Y |
Published: 2023-10-27
| Updated: 2024-09-09

