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NTBL045N065SC1

Name: onsemi NTBL045N065SC1
Brand: onsemi
SKU: 863-NTBL045N065SC1
Price: 19.61 CAD
Availability: OutOfStock

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Mouser #:

863-NTBL045N065SC1

Mfr. #:

NTBL045N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TOLL 650V

Datasheet:

NTBL045N065SC1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package / Case:	PSOF-8
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	73 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NTBL045N065SC1
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

NTBL045N065SC1 Datasheet (PDF)

PCN

Material Composition Disclosure

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Philippines
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

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NTBL045N065SC1 33mohm Silicon Carbide MOSFET

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