Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 268In Stock
$13.22
$7.79
$6.57
$6.36
$5.99
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 413In Stock
720Expected 2027-05-20
$15.74
$8.57
$7.93
$7.89
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 250In Stock
$14.37
$9.82
$8.11
$7.26
$6.83
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 41In Stock
500Expected 2026-12-10
$11.68
$6.31
$5.79
$5.31
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 90In Stock
$17.15
$11.69
$11.39
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 151In Stock
$21.69
$12.21
$12.00
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube