π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Résultats: 11
Sélectionner Image Référence
 Fab.
Description Fiche technique Disponibilité Prix (CAD) Filtrer les résultats dans le tableau par prix unitaire basé sur votre quantité.
Qté. RoHS Modèle de ECAO Technologie
Style de montage
Package/Boîte
Polarité du transistor
Nombre de canaux
Vds - Tension de rupture drain-source
Id - Courant continu de fuite
Rds On - Résistance drain-source
Vgs - Tension grille-source
Vgs th - Tension de seuil grille-source
Qg - Charge de grille
Température de fonctionnement min.
Température de fonctionnement max.
Pd - Dissipation d’énergie
Mode canal
Nom commercial
Conditionnement
Toshiba MOSFET TO252 900V 2A N-CH MOSFET
Fiche technique
4,015En stock
Bande coupée
$2.59
$1.36
$1.05
$0.827
Bobine
$0.768
Afficher
MouseReel disponible
Min. : 1
Mult. : 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
Fiche technique
3,090En stock
Bande coupée
$2.20
$1.04
$0.923
$0.723
Bobine
$0.693
Afficher
MouseReel disponible
Min. : 1
Mult. : 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Fiche technique
2,096En stock
$5.64
$3.21
$2.55
$2.33
$1.71
Min. : 1
Mult. : 1
Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Fiche technique
153En stock
$4.09
$2.02
$2.00
$1.87
Min. : 1
Mult. : 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Fiche technique
4En stock
1252026-11-13 attendu
$5.53
$2.82
$2.51
$2.06
Afficher
Min. : 1
Mult. : 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Fiche technique
250En stock
$2.32
$1.09
$0.855
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Fiche technique
265En stock
$2.36
$1.11
$0.855
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Fiche technique
158En stock
$3.40
$1.66
$1.64
$1.44
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
Fiche technique
170En stock
$3.17
$1.54
$1.53
$1.32
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
Fiche technique
96En stock
$4.81
$2.40
$2.13
$1.74
Afficher
Min. : 1
Mult. : 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Fiche technique
151En stock
400Sur commande
$4.62
$2.26
$2.02
$1.71
Min. : 1
Mult. : 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube