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RFNxRSM2S Ultra Fast Recovery Diodes
ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes with low forward voltage and low switching loss. These ultra-fast diodes feature a 200V peak reverse voltage and a storage temperature range of -55°C to 175°C. The RFNxRSM2S ultra-fast recovery diodes provide high current overload capacity. These diodes come in a TO-277A package. The RFNxRSM2S ultra-fast recovery diodes are RoHS-compliant and ideal for general rectification applications.