GAN041-650WSBQ

Nexperia
771-GAN041-650WSBQ
GAN041-650WSBQ

Mfr.:

Description:
GaN FETs GAN041-650WSB/SOT429/TO-247

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More Information
Learn more about Nexperia GAN041-650WSBQ

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
Through Hole
SOT-429-3
N-Channel
1 Channel
650 V
47.2 A
41 mOhms
- 20 V, + 20 V
4.5 V
22 nC
- 55 C
+ 175 C
187 W
Enhancement
Brand: Nexperia
Configuration: Single
Fall Time: 10 ns
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Rise Time: 10 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: GaN
Part # Aliases: 934661752127
Unit Weight: 123 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Application Notes

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GAN041-650WSB Gallium Nitride (GaN) FET

Nexperia GAN041-650WSB Gallium Nitride (GaN) FET offers a 650V drain-source voltage, 47.2A drain current rating, and 41mΩ maximum resistance. The GAN041 comes in a TO-247 package and is a normally-off device that combines high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies. The combination of these technologies provides superior reliability and performance. Nexperia GAN041-650WSB GaN FET is ideal for bridgeless totem-pole PFC, servo motor drives, and hard- and soft-switching converters for industrial and datacom power.

GaN FETs for Industrial Applications

Nexperia GaN FETs for Industrial Applications offer efficient power use and efficiencies in power conversion and control. For some applications, power conversion efficiency and power density are critical for market adoption. Prime examples include high-voltage communications and industrial infrastructure sectors. GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system costs.

In Stock: 215

Stock:
215 Can Ship Immediately
Factory Lead-Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$17.24 $17.24
$15.13 $151.30
$10.80 $1,080.00
$10.76 $5,380.00
Full Reel (Order in multiples of 30)
$15.13 $453.90

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.