Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
YQ20BM10SDFHTL
ROHM Semiconductor
1:
$3.00
4,497 En stock
Référence Mouser
755-YQ20BM10SDFHTL
ROHM Semiconductor
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
4,497 En stock
1
$3.00
10
$1.90
100
$1.34
500
$1.09
2,500
$0.90
5,000
Afficher
1,000
$0.992
5,000
$0.894
Acheter
Min. : 1
Mult. : 1
Bobine :
2,500
Détails
Schottky Diodes
SMD/SMT
TO-252-3
Single
Si
20 A
100 V
790 mV
150 A
80 uA
+ 150 C
Reel, Cut Tape
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
YQ10RSM10SDTFTL1
ROHM Semiconductor
1:
$3.25
2,583 En stock
Référence Mouser
755-YQ10RSM10SDTFTL1
ROHM Semiconductor
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
2,583 En stock
1
$3.25
10
$2.09
100
$1.41
500
$1.12
1,000
Afficher
4,000
$0.93
1,000
$1.03
2,000
$0.968
4,000
$0.93
Acheter
Min. : 1
Mult. : 1
Bobine :
4,000
Détails
Schottky Diodes
SMD/SMT
TO-277A-3
Dual Anode Common Cathode
Si
10 A
100 V
610 mV
200 A
80 uA
+ 175 C
Reel, Cut Tape
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10CDFHTL
ROHM Semiconductor
1:
$4.98
1,900 En stock
Référence Mouser
755-YQ20NL10CDFHTL
ROHM Semiconductor
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1,900 En stock
1
$4.98
10
$3.24
100
$2.25
500
$1.83
1,000
$1.67
2,000
$1.66
Acheter
Min. : 1
Mult. : 1
Bobine :
1,000
Détails
Schottky Diodes
SMD/SMT
TO-263L-3
Dual Anode Common Cathode
Si
20 A
100 V
650 mV
150 A
70 uA
+ 150 C
Reel, Cut Tape, MouseReel
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10SEFHTL
ROHM Semiconductor
1:
$4.41
2,000 En stock
Référence Mouser
755-YQ20NL10SEFHTL
ROHM Semiconductor
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
2,000 En stock
1
$4.41
10
$2.84
100
$1.96
500
$1.58
1,000
$1.47
2,000
$1.43
Acheter
Min. : 1
Mult. : 1
Bobine :
1,000
Détails
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
20 A
100 V
790 mV
200 A
80 uA
+ 150 C
Reel, Cut Tape
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ30NL10SEFHTL
ROHM Semiconductor
1:
$4.85
1,244 En stock
Référence Mouser
755-YQ30NL10SEFHTL
ROHM Semiconductor
Diodes et redresseurs Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1,244 En stock
1
$4.85
10
$3.17
100
$2.19
500
$1.77
1,000
$1.70
2,000
$1.61
Acheter
Min. : 1
Mult. : 1
Bobine :
1,000
Détails
Schottky Diodes
SMD/SMT
TO-263L-3
Single
Si
30 A
100 V
780 mV
200 A
150 uA
+ 150 C
Reel, Cut Tape