Automotive U-MOSX-H MOSFETs

Toshiba Automotive U-MOSX-H MOSFETs are AEC-Q101 qualified with low drain-source on-resistance. These devices feature a low leakage current of IDSS = 10µA (max) (VDS = 100V). The Toshiba Automotive U-MOSX-H MOSFETs are ideal for automotive, switching voltage, regulators, DC-DC converters, and motor drivers.

Results: 4
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Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
Toshiba MOSFETs 375W 1MHz Automotive; AEC-Q101
Datasheet
1,202In Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT TO-220SM-3 N-Channel 1 Channel 100 V 160 A 1.92 mOhms 20 V 3.5 V 184 nC + 175 C 375 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ
Datasheet
3,500In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 5,000

Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 80 A 5.7 mOhms 20 V 3.5 V 63 nC + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs POWER MOSFET TRANSISTOR SOP-ADVANCE(E) PD=250W F=1MHZ
Datasheet
1,752In Stock
Min.: 1
Mult.: 1
: 5,000

Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 238 A 1.9 mOhms 20 V 3.5 V 108 nC + 175 C 250 W Enhancement Reel, Cut Tape
Toshiba MOSFETs 80V 2.55mOhm N-ch MOSFET AEC-Q SOP Advance(WF)
Datasheet
5,000Expected 2026-11-16
MouseReel Available
Min.: 1
Mult.: 1
: 5,000

Si SMD/SMT SOP-8 N-Channel 1 Channel 80 V 120 A 2.55 mOhms 20 V 3.5 V 95 nC + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel