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QPD1006

Name: Qorvo QPD1006
Brand: Qorvo
SKU: 772-QPD1006
Price: 1700.74 CAD
Availability: OutOfStock

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See Product Specifications

Mouser #:

772-QPD1006

Mfr. #:

QPD1006

Mfr.:

Qorvo

Description:

GaN FETs 450W 50V 1.2-1.4GHz GaN IMFET

Datasheet:

QPD1006 Datasheet (PDF)

ECAD Model:

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Learn more about Qorvo QPD1006

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	NI-50CW
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	14 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	445 W
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1006EVB3
Gain:	17.8 dB
Maximum Drain Gate Voltage:	145 V
Maximum Operating Frequency:	1.4 GHz
Minimum Operating Frequency:	1.2 GHz
Moisture Sensitive:	Yes
Output Power:	450 W
Packaging:	Waffle
Product Type:	GaN FETs
Series:	QPD1006
Factory Pack Quantity:	36
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT

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Datasheet

QPD1006 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD1006 GaN RF IMFET Transistor

Qorvo QPD1006 GaN RF Internally Matched FET (IMFET) Transistor is a 450W GaN SiC high-electron mobility transistor (HEMT). The QPD1006 transistor operates from 1.2GHz to 1.4GHz frequency range and a 50V supply rail. This device can support pulsed and continuous wave (CW) operations. Qorvo QPD1006 transistor is GaN IMFET fully matched to 50Ω in an industry-standard air cavity package. This IMFET transistor is ideally suited for military and civilian radar.