(800) 346-6873

Part of the TTI Family of Specialists Contact Mouser (Kitchener) (800) 346-6873 Feedback

Change Location

In Stock

RoHS

Mfr.	Mfr. #:	Qty	Ext Total

View Cart

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

TM3B0020120A

Name: Coherent TM3B0020120A
Brand: Coherent
SKU: 508-TM3B0020120
Price: 64.24 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

508-TM3B0020120

Mfr. #:

TM3B0020120A

Mfr.:

Coherent

Description:

SiC MOSFETs 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101

Datasheet:

TM3B0020120A Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Coherent TM3B0020120A

In Stock: 139

Stock:: 139 Can Ship Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$64.24	$64.24
	$55.81	$558.10
	$48.81	$5,857.20
510	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Coherent
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	115 A
Rds On - Drain-Source Resistance:	24.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	172 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	660 W
Channel Mode:	Enhancement
Brand:	Coherent
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	12 ns
Forward Transconductance - Min:	30 S
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	39 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	17 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TM3B0020120A Datasheet (PDF)

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TM3x00 1200V SIC MOSFETs

Coherent TM3x00 1200V SIC MOSFETs feature low R_DS(on), superior thermal performance, and industry-leading avalanche capability, ensuring exceptional efficiency and versatility for automotive, industrial, and aerospace systems. The TM3x00 devices are built on Coherent's advanced Gen3+ technology platform and implement fast switching via ultra-low gate resistance. The TM3x00 1200V MOSFETs also provide very low-temperature invariant switching losses in TO247-4L, TSPAK, and TO263-7L package options. These devices are AEC-Q101 qualified at +200°C junction temperature and are proven in AS9100-rated aerospace applications.