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SICW025N065H4-BP

Name: Micro Commercial Components (MCC) SICW025N065H4-BP
Brand: Micro Commercial Components (MCC)
SKU: 833-SICW025N065H4-BP
Price: 20.75 CAD
Availability: InStock

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Mouser #:

833-SICW025N065H4-BP

Mfr. #:

SICW025N065H4-BP

Mfr.:

Micro Commercial Components (MCC)

Description:

SiC MOSFETs SiC MOSFET,TO-247-4

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SICW025N065H4-BP Datasheet (PDF)

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More Information

Learn more about Micro Commercial Components (MCC) SICW025N065H4-BP

In Stock: 360

Stock:: 360 Can Ship Immediately

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Factory Lead-Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$20.75	$20.75
	$15.49	$154.90
	$13.40	$1,340.00
	$12.69	$6,345.00
	$11.85	$11,850.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micro Commercial Components (MCC)
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	107 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	3.1 V
Qg - Gate Charge:	275 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	Micro Commercial Components (MCC)
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	18.2 S
Packaging:	Bulk
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	50 ns
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	28 ns

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Datasheet

SICW025N065H4-BP Datasheet (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

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SICWx Silicon Carbide (SiC) MOSFETs

Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs are high-speed switching 650V SiC MOSFETs. These MOSFETs utilize SiC MOSFET technology and are well-suited for high-voltage applications, providing reliable operation in harsh industrial environments. The SICWx MOSFETs are designed with low R_DS(on)and low gate charge to reduce switching losses and contribute to higher overall system efficiency. The efficiency-boosting design and TO-247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance the versatility. The SICWx MOSFETs are made with rugged design and avalanche capable to enable better thermal management and efficiency. These MOSFETs are ideally used in power supplies, telecommunication, renewable energy systems, and motor drives.