It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

CG2H30070F

Name: MACOM CG2H30070F
Brand: MACOM
SKU: 941-CG2H30070F
Price: 800.45 CAD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

941-CG2H30070F

Mfr. #:

CG2H30070F

Mfr.:

MACOM

Description:

GaN FETs 70W, DC-4.0GHz, 28V, RF Power GaN HEMT

Datasheet:

CG2H30070F Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about MACOM CG2H30070F

Shipping Alert:

This product may require additional documentation to export from the United States.

In Stock: 32

Stock:: 32

Can Ship Immediately

An unexpected error occurred. Please try again later.
On Order:: 60

Expected 2026-05-01
Factory Lead-Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$800.45	$800.45
	$698.62	$6,986.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Shipping Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	Screw Mount
Package / Case:	440224
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	12 A
Vgs th - Gate-Source Threshold Voltage:	- 3.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Development Kit:	CG2H30070F-TB1
Gain:	12.4 dB
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	0 Hz
Output Power:	70 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	10.466 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CG2H30070F Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: 3A001.b.3.a.4

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.