TGA2307-SM

Qorvo
772-TGA2307-SM
TGA2307-SM

Mfr.:

Description:
RF Modules 5-6GHz 50W GaN PAE >44% SSG >26dB

Datasheet:
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This product may require additional documentation to export from the United States.

In Stock: 2

Stock:
2 Can Ship Immediately
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
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Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$936.08 $936.08
$817.55 $8,175.50

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Modules
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
TGA2307
RF Amplifiers
- 40 C
+ 85 C
Waffle
Brand: Qorvo
Moisture Sensitive: Yes
Operating Supply Voltage: 28 V
Product Type: RF Modules
Factory Pack Quantity: 10
Subcategory: Wireless & RF Modules
Part # Aliases: TGA2307 1125999
Unit Weight: 117.300 mg
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CAHTS:
8542330000
CNHTS:
8542319090
USHTS:
8542330001
KRHTS:
8532331000
TARIC:
8517620090
MXHTS:
8542330201
ECCN:
3A001.b.2.a.4

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

TGA2307-SM 50W GaN Power Amplifier

Qorvo TGA2307-SM 50W GaN Power Amplifier operates from 5GHz to 6GHz and features a copper alloy base for superior thermal management. Developed using Qorvo's 0.25µm GaN (Gallium-Nitride) on SiC (Silicon Carbide) production process, the TGA2307-SM amplifier achieves greater than 47dBm of saturated output power with a power-added efficiency greater than 44% and a large signal gain greater than 20dB. The RF ports are fully matched to 50Ω with integrated DC blocking capacitors, making the TGA2307 amplifier ideally suited to support both commercial and military applications.

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