Types of Transistors
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Texas Instruments 2N7002L 6V N-channel MOSFETs
05-18-2026
05-18-2026
Designed to minimize the on-state resistance while maintaining fast switching performance.
Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power Modules
05-06-2026
05-06-2026
Power Modules are designed for high performance in xEV applications.
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04-14-2026
04-14-2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04-10-2026
04-10-2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04-07-2026
04-07-2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
04-06-2026
04-06-2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Vishay VS-HOT200C080 200A 80V Power MOSFET Module
04-02-2026
04-02-2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Toshiba N-Channel/P-Channel Power MOSFETs
03-31-2026
03-31-2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03-31-2026
03-31-2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03-27-2026
03-27-2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03-27-2026
03-27-2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03-24-2026
03-24-2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03-20-2026
03-20-2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03-17-2026
03-17-2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03-17-2026
03-17-2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03-17-2026
03-17-2026
These devices are a great fit for serving as battery disconnect switches in various applications.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03-13-2026
03-13-2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03-10-2026
03-10-2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03-10-2026
03-10-2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03-10-2026
03-10-2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03-10-2026
03-10-2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03-09-2026
03-09-2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03-06-2026
03-06-2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03-05-2026
03-05-2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03-05-2026
03-05-2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
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