RJP65T43DPM-00#T1

Name: Renesas Electronics RJP65T43DPM-00#T1
Brand: Renesas Electronics
SKU: 968-RJP65T43DPM-00T1
Price: 23.08 CAD
Availability: LimitedAvailability

Images are for reference only
See Product Specifications

Mouser #:

968-RJP65T43DPM-00T1

Mfr. #:

RJP65T43DPM-00#T1

Mfr.:

Renesas Electronics

Description:

IGBTs POWER TRS1

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

RJP65T43DPM-00#T1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

In Stock: 4

Stock:: 4 Can Ship Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 4 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$23.08	$23.08
	$22.41	$224.10
	$16.07	$482.10
	$13.39	$803.40
	$11.50	$1,380.00
	$11.24	$5,732.40

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-3PFM
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	68.8 W
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Renesas Electronics
Continuous Collector Current Ic Max:	20 A
Gate-Emitter Leakage Current:	1 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RJP65T43DPM-00#T1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RJP65T43DPM High Speed Switching IGBT

Renesas Electronics RJP65T43DPM High Speed Switching IGBT is a 650V, 20A IGBT with a 20kHz to 100kHz operating frequency range. This IGBT offers low collector-to-emitter saturation voltage and comes in a TO-3PFM package. The RJP65T43DPM IGBT features a 150A collector peak current, 68.8W collector dissipation, and 175°C junction temperature. This IGBT is stored in the -55°C to 150°C temperature range, and typical applications include Power Factor Correction (PFC).

RJP65T43DPM-00#T1

Mfr.: Renesas Electronics

Description: IGBTs POWER TRS1

In Stock: 4

Pricing (CAD)

Specifications

Documents (1)

Datasheet

Environmental Documents

Product Compliance

More Information

RJP65T43DPM High Speed Switching IGBT

FEATURED PRODUCTS RENESAS ELECTRONICS

QuickView

An unexpected error has occurred.

Mfr.:

Renesas Electronics

Description:

IGBTs POWER TRS1

FEATURED PRODUCTS

RENESAS ELECTRONICS