MHT2012NT1

NXP Semiconductors
771-MHT2012NT1
MHT2012NT1

Mfr.:

Description:
RF Amplifier RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
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In Stock: 975

Stock:
975 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 975 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$41.26 $41.26
$33.03 $330.30
$30.97 $774.25
$28.71 $2,871.00
$27.64 $6,910.00
$27.02 $13,510.00
Full Reel (Order in multiples of 1000)
$27.00 $27,000.00
2,000 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF Amplifier
RoHS:  
2.4 GHz to 2.5 GHz
28 V
75 mA
29.7 dB
Power Amplifiers
SMD/SMT
PQFN-24
Si
42.3 dBm
43 dBm
- 40 C
+ 150 C
MHT2012N
Reel
Cut Tape
Brand: NXP Semiconductors
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Product Type: RF Amplifier
Factory Pack Quantity: 1000
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 2.45 GHz
Part # Aliases: 935361937528
Products found:
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Attributes selected: 0

CAHTS:
8542330000
CNHTS:
8542339000
USHTS:
8542330001
TARIC:
8542330000
MXHTS:
8542330299
ECCN:
EAR99

RF-IF Solutions

NXP Semiconductors RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.