BM3G005MUV-LBE2

ROHM Semiconductor
755-BM3G005MUV-LBE2
BM3G005MUV-LBE2

Mfr.:

Description:
GaN FETs PMIC Power Switch/Driver, 650V, 5m, Low Side Nch

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 995

Stock:
995 Can Ship Immediately
Factory Lead-Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$25.02 $25.02
$19.36 $193.60
$17.62 $1,762.00
Full Reel (Order in multiples of 1000)
$15.95 $15,950.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
VQFN-46
1 Channel
650 V
68.8 A
70 mOhms
- 40 C
+ 105 C
Enhancement
Nano Cap; EcoGaN
Brand: ROHM Semiconductor
Fall Time: 2.7 ns
Maximum Operating Frequency: 2 MHz
Packaging: Reel
Packaging: Cut Tape
Product: GaN HEMT Power Stage
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 14 ns
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Attributes selected: 0

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USHTS:
8542390070
ECCN:
EAR99

Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. These ICs boast a blend of high power density and efficiency. The devices integrate a 650V enhancement GaN HEMT and a silicon driver. ROHM Semiconductor Nano Cap 650V GaN HEMT Power Stage ICs are ideal for applications that include industrial equipment, power supplies, bridge topology, and adapters.

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