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ISC030N12NM6ATMA1

Name: Infineon ISC030N12NM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC030N12NM6ATMA
Price: 9.55 CAD
Availability: InStock

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Mouser #:

726-ISC030N12NM6ATMA

Mfr. #:

ISC030N12NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

ISC030N12NM6ATMA1 Datasheet (PDF)

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In Stock: 36

Stock:: 36

Can Ship Immediately

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On Order:: 5,000

Expected 2026-06-01
Factory Lead-Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$9.55	$9.55
	$6.41	$64.10
	$4.62	$462.00
	$3.97	$1,985.00
	$3.74	$3,740.00
	$3.73	$9,325.00
Full Reel (Order in multiples of 5000)
	$3.59	$17,950.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	194 A
Rds On - Drain-Source Resistance:	3.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	59 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	MY
Country of Diffusion:	DE
Country of Origin:	DE
Fall Time:	8.8 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFETs
Rise Time:	7.6 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	ISC030N12NM6 SP005578327

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Datasheet

ISC030N12NM6ATMA1 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next-generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilizes thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimized for synchronous rectification. These MOSFETs are available in various voltage nodes, including 40V, 60V, 100V, 120V, 135V, 150V, and 200V.