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IMT40R011M2HXTMA1

Name: Infineon IMT40R011M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMT40R011M2HXTMA
Price: 23.5 CAD
Availability: InStock

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Mouser #:

726-IMT40R011M2HXTMA

Mfr. #:

IMT40R011M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMT40R011M2HXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMT40R011M2HXTMA1

In Stock: 996

Stock:: 996 Can Ship Immediately

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Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$23.50	$23.50
	$18.18	$181.80
	$16.83	$1,683.00
Full Reel (Order in multiples of 2000)
	$14.74	$29,480.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	144 A
Rds On - Drain-Source Resistance:	16.3 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	429 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9.3 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	18.3 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Type:	G2 MOSFET
Typical Turn-Off Delay Time:	29.8 ns
Typical Turn-On Delay Time:	15.8 ns
Part # Aliases:	IMT40R011M2H SP005915790

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Datasheet

IMT40R011M2HXTMA1 Datasheet (PDF)

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.