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LMG3100R017VBER

Name: Texas Instruments LMG3100R017VBER
Brand: Texas Instruments
SKU: 595-LMG3100R017VBER
Price: 22.54 CAD
Availability: InStock

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Mouser #:

595-LMG3100R017VBER

Mfr. #:

LMG3100R017VBER

Mfr.:

Texas Instruments

Description:

Gate Drivers 100V 1.7mohm GaN FET with integrated dri

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

LMG3100R017VBER Datasheet

ECAD Model:

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Learn more about Texas Instruments LMG3100R017VBER

In Stock: 3,314

Stock:: 3,314

Can Ship Immediately

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On Order:: 2,500

Expected 2026-02-26
Factory Lead-Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$22.54	$22.54
	$17.13	$171.30
	$16.41	$410.25
	$14.46	$1,446.00
	$13.75	$3,437.50
	$12.87	$6,435.00
	$12.00	$12,000.00
Full Reel (Order in multiples of 2500)
	$12.00	$30,000.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package / Case:	VQFN-FCRLF-15
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	8 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	5.25 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	LMG3100R017
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Texas Instruments
Input Voltage - Max:	5.25 V
Input Voltage - Min:	4.75 V
Logic Type:	TTL
Moisture Sensitive:	Yes
Operating Supply Current:	170 uA
Output Voltage:	12 V
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	1.7 mOhms
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

LMG3100R017VBER Datasheet

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CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

LMG3100R0x GaN FETs with Integrated Drivers

Texas Instruments LMG3100R0x Gallium Nitride (GaN) FETs with Integrated Drivers are 1.7mΩ GaN FETs and drivers with a high-side level shifter and bootstrap. Two LGM3100 devices can be used to form a half-bridge with no external level shifter required. The GaN FET and driver components feature built-in supply rail under-voltage lock-out (UVLO) protection and internal bootstrap supply voltage clamping capability to prevent overdrive (>5.4V). Texas Instruments LMG3100R0x offers low power consumption and an improved user interface. The LMG3100R017 is an ideal solution for high-frequency, high-efficiency applications, including buck-boost converters, LLC converters, solar inverters, telecom, motor drives, power tools, and Class D audio amplifiers.