SCTWA70N120G2V-4
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See Product Specifications
See Product Specifications
511-SCTWA70N120G2V-4
SCTWA70N120G2V-4
Mfr.:
Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Datasheet:
In Stock: 28
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Stock:
-
28 Can Ship ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead-Time:
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17 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 28 will be subject to minimum order requirements.
Pricing (CAD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $45.74 | $45.74 | |
| $32.78 | $327.80 | |
| $32.09 | $3,209.00 | |
| 600 | Quote |
Similar Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
New Product:
New from this manufacturer.
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
