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SCTH60N120G2-7

Name: STMicroelectronics SCTH60N120G2-7
Brand: STMicroelectronics
SKU: 511-SCTH60N120G2-7
Price: 25.54 CAD
Availability: OutOfStock

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Mouser #:

511-SCTH60N120G2-7

Mfr. #:

SCTH60N120G2-7

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

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Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTH60N120G2-7 Datasheet (PDF)

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Est. Tariff:

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	$25.54	$25,540.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	H2PAK-7
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	94 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	390 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	14 ns
Packaging:	Reel
Product Type:	SiC MOSFETS
Rise Time:	15 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	16 ns

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Filter Document:

Datasheet

SCTH60N120G2-7 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

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CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.