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PMDXB550UNEZ

Name: Nexperia PMDXB550UNEZ
Brand: Nexperia
SKU: 771-PMDXB550UNEZ
Price: 1.04 CAD
Availability: OutOfStock

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See Product Specifications

Mouser #:

771-PMDXB550UNEZ

Mfr. #:

PMDXB550UNEZ

Mfr.:

Nexperia

Description:

MOSFETs SOT1216 2NCH 30V .59A

Datasheet:

PMDXB550UNEZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB550UNEZ

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 61,000

Expected 2027-04-02

30,000

Expected 2027-04-12
Factory Lead-Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.04	$1.04
	$0.683	$6.83
	$0.432	$43.20
	$0.285	$142.50
	$0.217	$217.00
	$0.202	$505.00
Full Reel (Order in multiples of 5000)
	$0.158	$790.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DFN-1010-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	590 mA
Rds On - Drain-Source Resistance:	670 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	1.05 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	4.03 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	3 ns
Forward Transconductance - Min:	600 mS
Product Type:	MOSFETs
Rise Time:	7 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	4 ns
Part # Aliases:	934069326147
Unit Weight:	1.290 mg

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Attributes selected: 0

Filter Document:

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

PMDXB550UNE Dual N-Channel MOSFET

Nexperia PMDXB550UNE Dual N-Channel MOSFET is a surface mount device that offers a low threshold voltage. This 30V enhancement mode Field-Effect Transistor (FET) features exposed drain pad for an excellent thermal conduction and ESD protection. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits. The PMDXB550UNE MOSFET is designed using Trench MOSFET technology and is available in a leadless ultra-small DFN1010B-6 (SOT1216) plastic package.