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NTPF360N80S3Z

Name: onsemi NTPF360N80S3Z
Brand: onsemi
SKU: 863-NTPF360N80S3Z
Price: 6.94 CAD
Availability: InStock

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Mouser #:

863-NTPF360N80S3Z

Mfr. #:

NTPF360N80S3Z

Mfr.:

onsemi

Description:

MOSFETs SF3 800V 360MOHM TO-220F

Datasheet:

NTPF360N80S3Z Datasheet

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In Stock: 736

Stock:: 736 Can Ship Immediately

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Factory Lead-Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 736 will be subject to minimum order requirements.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$6.94	$6.94
	$3.58	$35.80
	$2.81	$281.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	360 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	25.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	31 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTPF360N80S3Z
Factory Pack Quantity:	50
Subcategory:	Transistors

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Datasheet

NTPF360N80S3Z Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NTPF360N80S3Z N-Channel SUPERFET® III MOSFET

onsemi NTPF360N80S3Z N-Channel SUPERFET® III is a high-performance power MOSFET with an 800V breakdown voltage. This SUPERFET is optimized for the primary switch of a flyback converter and enables lower switching losses and case temperature without sacrificing EMI performance. onsemi NTPF360N80S3Z SUPERFET comes with an internal Zener diode that significantly improves the electrostatic discharge (ESD) capability. Typical applications include adapters/chargers, LED lighting, AUX power, audio, and industrial power.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.