R8019KNXC7G

ROHM Semiconductor
755-R8019KNXC7G
R8019KNXC7G

Mfr.:

Description:
MOSFETs 800V 19A, TO-220FM, High-speed switching Power MOSFET: The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching.

Datasheet:
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Learn more about ROHM Semiconductor R8019KNXC7G

In Stock: 1,977

Stock:
1,977 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$11.58 $11.58
$6.25 $62.50
$5.75 $575.00
$5.23 $2,615.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220FM-3
N-Channel
1 Channel
800 V
19 A
265 mOhms
- 20 V, 20 V
4.5 V
65 nC
- 55 C
+ 150 C
83 W
Enhancement
Tube
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 60 ns
Product Type: MOSFETs
Rise Time: 50 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 35 ns
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Attributes selected: 0

Datasheet

Specification Sheets

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Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

R8019KNXC7G N-Ch 800V 19A Power MOSFETs

ROHM Semiconductor R8019KNXC7G N-Ch 800V 19A Power MOSFETs are low-on-resistance devices with fast switching. This power MOSFET features a 0.265Ω RDS(on)(Maximum), 83W power dissipation, and a -55°C to 150°C operating temperature range. The R8019KNXC7G Nch 800V 19A comes with Pb-free plating and is RoHS compliant. This power MOSFET has parallel use that is easy to use and is ideally used in switching applications.

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