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DMTH6004LPS-13

Name: Diodes Incorporated DMTH6004LPS-13
Brand: Diodes Incorporated
SKU: 621-DMTH6004LPS-13
Price: 3.36 CAD
Availability: InStock

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Mouser #:

621-DMTH6004LPS-13

Mfr. #:

DMTH6004LPS-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 100A

Datasheet:

DMTH6004LPS-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMTH6004LPS-13

In Stock: 620

Stock:: 620 Can Ship Immediately

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Factory Lead-Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 620 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$8.50)

Pricing (CAD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.36	$3.36
	$2.32	$23.20
	$1.64	$164.00
	$1.31	$655.00
	$1.27	$1,270.00
Full Reel (Order in multiples of 2500)
	$1.21	$3,025.00

† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerDI5060-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	96.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	32.9 ns
Product Type:	MOSFETs
Rise Time:	17.7 ns
Series:	DMTH6004
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	53.5 ns
Typical Turn-On Delay Time:	9.9 ns
Unit Weight:	96 mg

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Datasheet

DMTH6004LPS-13 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMTH6004 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH6004 N-channel Enhance Mode MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and maintain superior switching performance. The DMTH6004 MOSFET provides a BV_DSS voltage of 60V and is rated to +175°C. This MOSFET from Diodes Incorporated is ideal for high-efficiency power management applications such as a primary switch in isolated DC-DC, synchronous rectifier, and load switch.