NTBG060N065SC1

onsemi
863-NTBG060N065SC1
NTBG060N065SC1

Mfr.:

Description:
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L

Datasheet:
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In Stock: 334

Stock:
334 Can Ship Immediately
Factory Lead-Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (CAD)

Qty. Unit Price
Ext. Price
$17.78 $17.78
$12.34 $123.40
$10.45 $1,045.00
$9.77 $4,885.00
Full Reel (Order in multiples of 800)
$9.77 $7,816.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
N-Channel
1 Channel
650 V
46 A
70 mOhms
- 8 V, + 22 V
4.3 V
74 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 12 S
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Rise Time: 14 ns
Series: NTBG060N065SC1
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 11 ns
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Attributes selected: 0

Datasheet

PCN

CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

NTBG060N065SC1 44mohm Silicon Carbide MOSFET

onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG060N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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