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TK065Z65Z,S1F

Name: Toshiba TK065Z65Z,S1F
Brand: Toshiba
SKU: 757-TK065Z65Z,S1F
Price: 17.24 CAD
Availability: InStock

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Mouser #:

757-TK065Z65Z,S1F

Mfr. #:

TK065Z65Z,S1F

Mfr.:

Toshiba

Description:

MOSFETs PWR MOSFET TRANSISTR PD=270W F=1MHz

Datasheet:

TK065Z65Z,S1F Datasheet (PDF)

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In Stock: 34

Stock:: 34 Can Ship Immediately

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Factory Lead-Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$17.24	$17.24
	$12.31	$123.10
	$8.73	$873.00
	$7.49	$3,745.00
	$7.46	$7,460.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-4L-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	62 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	270 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4.2 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	130 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	6 g

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Datasheet

TK065Z65Z,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TK065Z65Z Silicon N-Channel MOSFET

Toshiba TK065Z65Z Silicon N-Channel MOSFET is a 270W power dissipation MOSFET with high-speed switching properties and lower capacitance. This power MOSFET operates at -55°C to 150°C and 0.054Ω low drain-source on-resistance. The Toshiba TK065Z65Z MOSFET features a 3V to 4V enhancement mode, 38A continuous drain current (at 150°C), and 650V drain-source breakdown voltage. Typical applications include switching power supplies.