CGHV40200PP

MACOM
941-CGHV40200PP
CGHV40200PP

Mfr.:

Description:
GaN FETs GaN HEMT DC-2.5GHz, 180 Watt

Datasheet:
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Learn more about MACOM CGHV40200PP
This product may require additional documentation to export from the United States.

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
Screw Mount
440199
N-Channel
150 V
8.7 A
- 3 V
- 40 C
+ 150 C
166 W
1.9 GHz
1.7 GHz
GaN
Brand: MACOM
Configuration: Single
Development Kit: CGHV40200PP-AMP1
Gain: 16.1 dB
Output Power: 250 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
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Compliance Codes
CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
3A001.b.3.a.4
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

CGHV40200PP GaN HEMT

MACOM CGHV40200PP Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) operates from a 50V rail and offers a broadband solution to RF and microwave applications. This transistor provides high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. MACOM CGHV40200PP GaN HEMT is available in a 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.

In Stock: 34

Stock:
34
Can Ship Immediately
On Order:
50
Expected 2026-09-18
Factory Lead-Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (CAD)

Qty. Unit Price
Ext. Price
$911.89 $911.89
$799.56 $7,995.60

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