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NCV57001FDWR2G

Name: onsemi NCV57001FDWR2G
Brand: onsemi
SKU: 863-NCV57001FDWR2G
Price: 7.01 CAD
Availability: InStock

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Mouser #:

863-NCV57001FDWR2G

Mfr. #:

NCV57001FDWR2G

Mfr.:

onsemi

Description:

Galvanically Isolated Gate Drivers ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

Datasheet:

NCV57001FDWR2G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NCV57001FDWR2G

In Stock: 1,138

Stock:: 1,138 Can Ship Immediately

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Factory Lead-Time:: 29 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$7.01	$7.01
	$4.64	$46.40
	$4.62	$115.50
	$3.76	$376.00
	$3.74	$935.00
	$3.60	$1,800.00
Full Reel (Order in multiples of 1000)
	$3.28	$3,280.00
	$3.24	$6,480.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	NCV57001FDWR2G
Mounting Style:	SMD/SMT
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Rise Time:	10 ns
Fall Time:	15 ns
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Inverting, Non-Inverting
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	4 A
Product:	IGBT, MOSFET Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5 V
Supply Voltage - Min:	3.3 V

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Datasheet

NCV57001FDWR2G Datasheet

Material Composition Disclosure

Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCV57001F IGBT Gate Driver

onsemi NCV57001F IGBT Gate Driver is a high-current single-channel IGBT driver with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. onsemi NCV57001F IGBT Gate Driver accommodates 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kV_rms (UL1577 rating) galvanic isolation and >1200V_iorm (working voltage) capabilities. Typical applications include automotive power supplies, hybrid/electric vehicle (HEV/EV) powertrains, BSG inverters, and positive temperature coefficient (PTC) heaters.