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NTTFSSCH1D3N04XL

Name: onsemi NTTFSSCH1D3N04XL
Brand: onsemi
SKU: 863-NTTFSSCH1D3N04XL
Price: 3.98 CAD
Availability: InStock

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Mouser #:

863-NTTFSSCH1D3N04XL

Mfr. #:

NTTFSSCH1D3N04XL

Mfr.:

onsemi

Description:

MOSFETs T10S 40V PC33 SOURCE DOWN

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTTFSSCH1D3N04XL Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTTFSSCH1D3N04XL

In Stock: 156

Stock:: 156

Can Ship Immediately

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On Order:: 10,000

Expected 2026-06-05
Factory Lead-Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (CAD)

Qty.	Unit Price	Ext. Price
	$3.98	$3.98
	$2.57	$25.70
	$1.84	$184.00
	$1.53	$765.00
	$1.42	$1,420.00
Full Reel (Order in multiples of 5000)
	$1.21	$6,050.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	WDFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	207 A
Rds On - Drain-Source Resistance:	1.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	107 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	123 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	NTTFSSCH1D3N04XL
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

NTTFSSCH1D3N04XL Datasheet

CAHTS:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.

NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET

onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET is engineered to handle high currents, which is crucial for DC-DC power conversion stages. This 40V, 207A, single N-channel power MOSFET offers lower on-resistance, increased higher power density, and superior thermal performance. The shield gate trench design provides an ultra-low gate charge and 1.3mΩ R_DS(on). The compact 3.3mm x 3.3mm source-down dual cool GEN2 package is lead free, halogen free, BFR free, and RoHS compliant. onsemi NTTFSSCH1D3N04XL T10 PowerTrench MOSFET is designed to provide an efficient solution for data center and cloud applications.