DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

Results: 19
Select Image Part # Mfr. Description Datasheet Availability Pricing (CAD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) 4,903In Stock
Min.: 1
Mult.: 1
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape
Toshiba MOSFETs Power MOSFET N-Channel 640In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel 98In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 10In Stock
30Expected 2026-09-21
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 43In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFETs Power MOSFET N-Channel 80In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel 60In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel 79In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel 71In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 88m (VGS=10V) 52In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 24In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 40mOhmmax 60In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS
5Expected 2026-08-17
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms - 30 V, 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DFN 8?8 PD=180W F=1MHZ Non-Stocked
Min.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ Non-Stocked
Min.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs 180W 1MHZ POWER MOSFET TRANSISTOR Non-Stocked
Min.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel