GANB4R8-040CBAZ

Nexperia
771-GANB4R8-040CBAZ
GANB4R8-040CBAZ

Mfr.:

Description:
GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 4,664

Stock:
4,664 Can Ship Immediately
Factory Lead-Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$4.45 $4.45
$2.89 $28.90
$2.82 $141.00
$2.00 $200.00
$1.66 $830.00
Full Reel (Order in multiples of 2500)
$1.61 $4,025.00
$1.34 $6,700.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: GaN FETs
RoHS:  
SMD/SMT
WLCSP-22
N-Channel
1 Channel
20 A
- 6 V, + 6 V
15.8 nC
- 40 C
+ 125 C
13 W
Enhancement
Brand: Nexperia
Configuration: Single
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Part # Aliases: 934667630341
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Attributes selected: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

GANB4R8-040CBA Bi-Directional GaN FET

Nexperia GANB4R8-040CBA Bi-Directional GaN FET is a 40V, 4.8mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT). The GANB4R8-040CBA is a normally-off emode FET providing superior performance. The Nexperia GANB4R8-040CBA is available in a Wafer-Level Chip Scale (WLCSP) package.