SSM6J771G,LF

Toshiba
757-SSM6J771GLF
SSM6J771G,LF

Mfr.:

Description:
MOSFETs P-Ch SSM -5A -20V 12V VGSS 0.035Ohm

Datasheet:
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Learn more about Toshiba SSM6J771G,LF

In Stock: 935

Stock:
935
Can Ship Immediately
On Order:
3,000
Expected 2026-11-16
Factory Lead-Time:
24
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (CAD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.61 $1.61
$1.00 $10.00
$0.657 $65.70
$0.544 $272.00
$0.459 $459.00
Full Reel (Order in multiples of 3000)
$0.396 $1,188.00
$0.366 $2,196.00
$0.351 $3,159.00
† $8.50 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
WCSP6C-6
P-Channel
2 Channel
20 V
5 A
26 mOhms
- 12 V, 12 V
1.2 V
9.8 nC
- 55 C
+ 150 C
5 W
Enhancement
U-MOSVI
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Dual
Forward Transconductance - Min: 19 S
Product Type: MOSFETs
Series: SSM6J771
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 P-Channel
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 28 ns
Unit Weight: 1.400 mg
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Attributes selected: 0

Compliance Codes
CAHTS:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

SSM6J771G Ultra-Compact MOSFET

Toshiba SSM6J771G Ultra-Compact MOSFET offers a high gate to source breakdown voltage, high drain to source breakdown voltage, and a low drain to source ON resistance. This P-channel MOSFET comes in a WCSP-6C package with a 6-pin ball-grid style and offers a compact solution for designs with tight board space requirements. Toshiba SSM6J771G Ultra-Compact MOSFET is suitable for use in BATFETs and power management switches.

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